advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 105v single drive requirement r ds(on) 35m fast switching characteristic i d 39a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 200806251 halogen-free product 1 AP40T10GP-HF parameter rating drain-source voltage 105 gate-source voltage + 20 continuous drain current, v gs @ 10v 39 continuous drain current, v gs @ 10v 27 pulsed drain current 1 80 total power dissipation 125 -55 to 175 operating junction temperature range -55 to 175 thermal data parameter storage temperature range g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-220(p) the to-220 package is widely preferred for commercial-industrial applications and suited for low voltage applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 105 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - - 35 m ? ?
a p40t10gp-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 0 4 8 12 16 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 175 o c 10v 7.0v 6 .0v 5.0 v v g = 4.5 v 20 30 40 50 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =10a t c =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =15a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.0 0.6 1.2 1.8 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized v gs(th) (v) 0 25 50 75 100 125 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4.5v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP40T10GP-HF q v g 10v q gs q gd q g charge 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 0 102030 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v i d =40a 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
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